Method for removing native oxide and residue from a III-V group containing surface

ABSTRACT

Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

CROSS-REFERENCE TO OTHER APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/540,104, now U.S. Pat. No. 9,653,291, which is herein incorporated byreference.

BACKGROUND Field

Embodiments of the present invention relate generally to semiconductorsubstrate processing and, more particularly, to systems and methods forcleaning native oxide and residue from a substrate surface having III-Vgroup containing materials.

Description of the Related Art

In the microfabrication of integrated circuits and other devices,electrical interconnect features, such as contacts, vias, and lines, arecommonly constructed on a substrate using high aspect ratio aperturesformed in a dielectric material. The presence of native oxides and othercontaminants such as etch residue within these small apertures is highlyundesirable, contributing to defect formation during subsequent filmgrowth or metalization of the aperture and increasing the electricalresistance of the interconnect feature.

A native oxide typically forms when a substrate surface is exposed tooxygen and/or water. Oxygen exposure occurs when substrates are movedbetween processing chambers at atmospheric or ambient conditions, orwhen a small amount of oxygen/moisture remains in a processing chamberand/or transfer chamber. In addition, native oxides may result fromcontamination during etching processes, prior to or after a depositionprocess. Native oxide films are usually very thin, for example between5-20 angstroms, but thick enough to cause difficulties in subsequentfabrication processes. Furthermore, native oxide may cause high contactresistance in source and drain areas and adversely increase thethickness of equivalent of oxide (EOT) in channel areas. Therefore, anative oxide layer is typically undesirable and needs to be removedprior to subsequent fabrication processes.

In conventional practice, NF₃ and NH₃ gas mixtures are often used toremove native oxide from a substrate surface, which typically is asilicon surface. As circuit densities increase for next generationdevices, the widths of interconnects, such as vias, trenches, contacts,gate structures and other features, as well as the dielectric materialstherebetween, have decreased to less than 20 nm in width. Differentmaterials are constantly developed to provide better electricalperformance in semiconductor devices as the device dimension shrinks.For example, Ge containing materials, III-V group materials or III-Vgroup compounds, such as Ge, SiGe, GaAs, InP, InAs, GaAs, GaP, InGaAs,and InGaAsP, and the like, are getting more and more attention for usein source-drain, channel, gate structure, metal silicide, or otherregions of semiconductor devices. However, conventional native oxideremoval technique by dry etching cannot efficiently remove native oxidefrom these surfaces, since conventional techniques are typicallydesigned to remove native silicon oxide layer, in which the siliconatoms are attacked by NH₄F or NH₄F.NF forming solid by-produce(NH₄)₂SiF₆ and sublimated into vapor phase gas, which is readily pumpedout of the processing chamber. In contrast, III-V group materials orIII-V group compounds do not react with NH₄F or NH₄F.NF to form a vaporgas by-product or readily sublimated into gas phase by-product which canbe pumped out of the processing chamber. Instead, the conventionalfluorine cleaning techniques may undesirably generate particles or solidby-product after reacting with the III-V group materials or III-V groupcompounds, thereby adversely creating surface contamination or keep thenative oxide intact, which may eventually lead to device failure.

Other conventional cleaning techniques for removing native oxides from asurface exist but generally have one or more drawbacks. Sputter etchprocesses have been used to reduce or remove contaminants, but aregenerally only effective in large features or in small features havinglow aspect ratios, such as less than about 4:1. In addition, sputteretch processes can damage other material layers disposed on thesubstrate by physical bombardment. Wet etch processes utilizinghydrofluoric or hydrochloric acid are also used to remove native oxides,but are less effective in smaller features with aspect ratios exceeding4:1, as surface tension prevents acids from wetting the entire feature.In addition, conventional HF cannot remove natives of III-V groupcompounds.

Accordingly, there is a need in the art for methods of removing nativeoxides and residue from a substrate surface having III-V groupcontaining materials.

SUMMARY

Embodiments of the present disclosure provide methods for removingnative oxides and residues using a multiple stage cleaning process atrelatively low temperature, such as less than 550 degrees Celsius. Inone example, the method for removing native oxides from a substrateincludes supplying a first gas mixture including an inert gas onto asurface of a material layer disposed on a substrate into a firstprocessing chamber, wherein the material layer is a III-V groupcontaining layer for a first period of time, supplying a second gasmixture including an inert gas and a hydrogen containing gas onto thesurface of the material layer for a second period of time, and supplyinga third gas mixture including a hydrogen containing gas to the surfaceof the material layer while maintaining the substrate at a temperatureless than 550 degrees Celsius.

In another example, a method for removing native oxides from a materiallayer disposed on a substrate includes performing a surface treatmentprocess to alter bonding structures of native oxide on a material layerdisposed on a substrate, wherein the material layer is a III-V groupcontaining layer, performing a native oxide removal process to removethe native oxide from the material layer, and performing a post-cleaningbaking process on the material layer at a temperature less than 550degrees Celsius.

In yet another example, a method for removing native oxides from amaterial layer disposed on a substrate includes supplying an inert gasto a surface of a material layer disposed on a substrate to alterbonding structures of native oxide on the surface of the material layerfor a first period of time at a first temperature, wherein the materiallayer is a III-V group containing layer, supplying a H₂ gas and an inertgas to remove the native oxide from the material layer for a secondperiod of time at a second temperature, and supplying a H₂ gas to removeresidual oxide from the material layer for a third period of time whilemaintaining the substrate at a third temperature, wherein the thirdtemperature is higher than the first and the second temperature.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings.

FIG. 1 is a schematic cross-sectional view of a processing chamberconfigured to perform a cleaning process according to one or moreembodiments of the disclosure.

FIG. 2 is a schematic cross-sectional view of a processing chamberconfigured to perform a post-cleaning baking process according to one ormore embodiments of the disclosure.

FIG. 3 is a schematic plan view diagram of an exemplary multi-chamberprocessing system configured to perform a cleaning process on asubstrate, according to one or more embodiments of the disclosure.

FIG. 4 is a flowchart of a method for processing a substrate in aprocessing chamber, according to one or more embodiments of the presentdisclosure.

FIGS. 5A-5C are cross-sectional views of a substrate processed in theprocessing chamber according to the method depicted in FIG. 4, accordingto one or more embodiments of the present disclosure.

FIGS. 6A-6B is a cross-sectional view of a semiconductor device formedon a substrate that may utilize the method depicted in FIG. 4, accordingto one or more embodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

It is to be noted, however, that the appended drawings illustrate onlyexemplary embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

DETAILED DESCRIPTION

As will be explained in greater detail below, a substrate having asurface is treated to remove native oxides or other contaminants priorto forming a device structure, such as a gate structure, a contactstructure, a metal-insulator-semiconductor (MIS), a metal silicidelayer, or the like, on the substrate. The term “substrate” as usedherein refers to a layer of material that serves as a basis forsubsequent processing operations and includes a surface to be cleaned.For example, the substrate can include one or more material containinggermanium or III-V group containing compounds, such as Ge, SiGe, GaAs,InP, InAs, GaAs, GaP, InGaAs, InGaAsP, GaSb, InSb and the like, orcombinations thereof. Furthermore, the substrate can also includedielectric materials such as silicon dioxide, organosilicates, andcarbon doped silicon oxides. The substrate may also include one or moreconductive metals, such as nickel, titanium, platinum, molybdenum,rhenium, osmium, chromium, iron, aluminum, copper, tungsten, orcombinations thereof. Further, the substrate can include any othermaterials such as metal nitrides, metal oxides and metal alloys,depending on the application. In one or more embodiments, the substratecan form a contact structure, a metal silicide layer, or a gatestructure including a gate dielectric layer and a gate electrode layerto facilitate connecting with an interconnect feature, such as a plug,via, contact, line, and wire, subsequently formed thereon, or suitablestructures utilized in semiconductor devices.

Moreover, the substrate is not limited to any particular size or shape.The substrate can be a round wafer having a 200 mm diameter, a 300 mmdiameter, a 450 mm diameter or other diameters. The substrate can alsobe any polygonal, square, rectangular, curved or otherwise non-circularworkpiece, such as a polygonal glass, plastic substrate used in thefabrication of flat panel displays.

Embodiments of the present disclosure describe cleaning processes thatmay be used to clean a substrate surface prior to a deposition or anetching process. The substrate surface may include a III-V group (or Gecontaining) containing materials. The cleaning process utilizes multiplestages, including a pretreatment process, cleaning process and apost-cleaning process at low temperature, such as less than 550 degreesCelsius, to react with the native oxide or other contaminants andefficiently remove undesired native oxides and/or other contaminantsfrom the substrate surface.

FIG. 1 is a simplified cutaway view for an exemplary processing chamber100 suitable for cleaning a substrate 301 having a III-V group materialdisposed thereon. The exemplary processing chamber 100 is suitable forremoving one or more native oxide or residuals from the substrate 301.One example of the process chamber 100 that may be adapted to benefitfrom the disclosure is an AdvantEdge™ Mesa™ Etch processing chamber,available from Applied Materials, Inc., located in Santa Clara, Calif.It is contemplated that other process chambers, including those fromother manufactures, may be adapted to practice embodiments of thedisclosure.

The cleaning processing chamber 100 includes a chamber body 105 having achamber volume 101 defined therein. The chamber body 105 has sidewalls112 and a bottom 118 which are coupled to ground 126. The sidewalls 112have a liner 115 to protect the sidewalls 112 and extend the timebetween maintenance cycles of the cleaning processing chamber 100. Thedimensions of the chamber body 105 and related components of thecleaning processing chamber 100 are not limited and generally areproportionally larger than the size of the substrate 301 to be processedtherein. Examples of substrate sizes include 200 mm diameter, 250 mmdiameter, 300 mm diameter and 450 mm diameter, among others.

The chamber body 105 supports a chamber lid assembly 110 to enclose thechamber volume 101. The chamber body 105 may be fabricated from aluminumor other suitable materials. A substrate access port 113 is formedthrough the sidewall 112 of the chamber body 105, facilitating thetransfer of the substrate 301 into and out of the cleaning processingchamber 100. The access port 113 may be coupled to a transfer chamberand/or other chambers of a substrate processing system (not shown).

A pumping port 145 is formed through the sidewall 112 of the chamberbody 105 and connected to the chamber volume 101. A pumping device (notshown) is coupled through the pumping port 145 to the chamber volume 101to evacuate and control the pressure therein. The pumping device mayinclude one or more pumps and throttle valves.

A gas panel 160 is coupled by a gas line 167 to the chamber body 105 tosupply process gases into the chamber volume 101. The gas panel 160 mayinclude one or more process gas sources 161, 162, 163, 164 and mayadditionally include inert gases, non-reactive gases, and reactivegases, if desired. Examples of process gases that may be provided by thegas panel 160 include, but are not limited to, hydrocarbon containinggas including methane (CH₄), sulfur hexafluoride (SF₆), carbontetrafluoride (CF₄), hydrogen bromide (HBr), hydrocarbon containing gas,argon gas (Ar), chlorine (Cl₂), nitrogen (N2), helium (He) and oxygengas (O₂). Additionally, process gasses may include chlorine, fluorine,oxygen and hydrogen containing gases such as BCl₃, C₂F₄, C₄F₈, C₄F₆,CHF₃, CH₂F₂, CH₃F, NF₃, CO₂, SO₂, CO, and H₂ among others.

Valves 166 control the flow of the process gases from the sources 161,162, 163, 164 from the gas panel 160 and are managed by a controller165. The flow of the gases supplied to the chamber body 105 from the gaspanel 160 may include combinations of the gases.

The lid assembly 110 may include a nozzle 114. The nozzle 114 has one ormore ports for introducing the process gases from the sources 161, 162,164, 163 of the gas panel 160 into the chamber volume 101. After theprocess gases are introduced into the cleaning processing chamber 100,the gases are energized to form plasma. An antenna 148, such as one ormore inductor coils, may be provided adjacent to the cleaning processingchamber 100. An antenna power supply 142 may power the antenna 148through a match circuit 141 to inductively couple energy, such as RFenergy, to the process gas to maintain a plasma formed from the processgas in the chamber volume 101 of the cleaning processing chamber 100.Alternatively, or in addition to the antenna power supply 142, processelectrodes below the substrate 301 and/or above the substrate 301 may beused to capacitively couple RF power to the process gases to maintainthe plasma within the chamber volume 101. The operation of the powersupply 142 may be controlled by a controller, such as controller 165,that also controls the operation of other components in the cleaningprocessing chamber 100.

A substrate support pedestal 135 is disposed in the chamber volume 101to support the substrate 301 during processing. The support pedestal 135may include an electrostatic chuck 122 for holding the substrate 301during processing. The electrostatic chuck (ESC) 122 uses theelectrostatic attraction to hold the substrate 301 to the substratesupport pedestal 135. The ESC 122 is powered by an RF power supply 125integrated with a match circuit 124. The ESC 122 comprises an electrode121 embedded within a dielectric body. The electrode 121 is coupled tothe RF power supply 125 and provides a bias which attracts plasma ions,formed by the process gases in the chamber volume 101, to the ESC 122and substrate 301 positioned thereon. The RF power supply 125 may cycleon and off, or pulse, during processing of the substrate 301. The ESC122 has an isolator 128 for the purpose of making the sidewall of theESC 122 less attractive to the plasma to prolong the maintenance lifecycle of the ESC 122. Additionally, the substrate support pedestal 135may have a cathode liner 136 to protect the sidewalls of the substratesupport pedestal 135 from the plasma gases and to extend the timebetween maintenance of the cleaning processing chamber 100.

Furthermore, the electrode 121 is coupled to a power source 150. Thepower source 150 provides a chucking voltage of about 200 volts to about2000 volts to the electrode 121. The power source 150 may also include asystem controller for controlling the operation of the electrode 121 bydirecting a DC current to the electrode 121 for chucking and de-chuckingthe substrate 301.

The ESC 122 may include heaters disposed therein and connected to apower source (not shown), for heating the substrate, while a coolingbase 129 supporting the ESC 122 may include conduits for circulating aheat transfer fluid to maintain a temperature of the ESC 122 andsubstrate 301 disposed thereon. The ESC 122 is configured to perform inthe temperature range required by the thermal budget of the device beingfabricated on the substrate 301. For example, the ESC 122 may beconfigured to maintain the substrate 301 at a temperature of about minusabout 25 degrees Celsius to about 500 degrees Celsius for certainembodiments.

The cooling base 129 is provided to assist in controlling thetemperature of the substrate 301. To mitigate process drift and time,the temperature of the substrate 301 may be maintained substantiallyconstant by the cooling base 129 throughout the time the substrate 301is in the cleaning chamber. In one embodiment, the temperature of thesubstrate 301 is maintained throughout subsequent cleaning processes atabout 30 to 120 degrees Celsius.

A cover ring 130 is disposed on the ESC 122 and along the periphery ofthe substrate support pedestal 135. The cover ring 130 is configured toconfine etching gases to a desired portion of the exposed top surface ofthe substrate 301, while shielding the top surface of the substratesupport pedestal 135 from the plasma environment inside the cleaningprocessing chamber 100. Lift pins (not shown) are selectively movedthrough the substrate support pedestal 135 to lift the substrate 301above the substrate support pedestal 135 to facilitate access to thesubstrate 301 by a transfer robot (not shown) or other suitable transfermechanism.

The controller 165 may be utilized to control the process sequence,regulating the gas flows from the gas panel 160 into the cleaningprocessing chamber 100 and other process parameters. Software routines,when executed by the CPU, transform the CPU into a specific purposecomputer (controller) that controls the cleaning processing chamber 100such that the processes are performed in accordance with the presentdisclosure. The software routines may also be stored and/or executed bya second controller (not shown) that is collocated with the cleaningprocessing chamber 100.

The substrate 301 has various film layers disposed thereon which mayinclude at least one III-V group (or germanium containing material)disposed on the substrate 301. The various film layers may requirecleaning recipes which are unique for the different compositions of theother film layers in the substrate 301. Each cleaning processing chambermay be configured to clean the substrate 301 with one or more of thecleaning recipes. In one embodiment, the cleaning processing chamber 100is configured to at least clean a III-V group material layer 502(depicted in FIG. 5A-5C) disposed on the substrate 301. For processingparameters provided herein, the cleaning processing chamber 100 isconfigured to process a 300 mm diameter substrate, i.e., a substratehaving a plan area of about 0.0707 m², or a 450 mm diameter substrate.The process parameters, such as flow and power, may generally be scaledproportionally with the change in the chamber volume or substrate planarea.

FIG. 2 illustrates a schematic view of a processing chamber 200according to one embodiment. The processing chamber 200 may be used toprocess one or more substrates 301, including providing thermal/heatenergy, to perform a baking process on a III-V group material surfacedisposed on the substrate 301. The substrate 301 may include, but is notlimited to 200 mm, 300 mm or larger single crystal silicon (Si),multi-crystalline silicon, polycrystalline silicon, germanium (Ge),silicon carbide (SiC), glass, gallium arsenide (GaAs), cadmium telluride(CdTe), cadmium sulfide (CdS), copper indium gallium selenide (CIGS),copper indium selenide (CuInSe₂), gallium indium phosphide (GaInP₂), aswell as heterojunction substrates, such as GaInP/GaAs/Ge or ZnSe/GaAs/Gesubstrates. The processing chamber 200 may include an array of radiantheating lamps 202 for heating, among other components, a back side 204of a susceptor 220 disposed within walls 201 of the processing chamber200, and the substrate 301. The susceptor 220 is supported by asusceptor support 218. In the embodiment shown in FIG. 2, the susceptor220 has a ring shaped body with a central opening 203 and a lip 221 thatextends from the edge of the susceptor 220 and circumscribes the centralopening 203. The lip 221 and the front side 202 of the susceptor 220create a pocket 226 that supports the substrate 301 from the edge of thesubstrate to facilitate exposure of the substrate 301 to the thermalradiation provided by the lamps 202.

The susceptor 220 is located within the processing chamber 200 betweenan upper dome 210 and a lower dome 212. The upper dome 210 is coupled tothe lower dome 212 by a base ring 214. The upper dome 210, the lowerdome 212 and the base ring 214 generally define an internal region ofthe processing chamber 200. In some embodiments, the array of radiantheating lamps 202 may be disposed over the upper dome 210. The substrate301 can be brought into the processing chamber 200 and positioned ontothe susceptor 220 through a loading port (not shown) formed in the basering 214.

The susceptor 220 is shown in an elevated processing position, but maybe moved vertically by an actuator (not shown) to a loading positionbelow the processing position to allow lift pins 222 to pass throughholes in the susceptor support 218, and raise the substrate 301 from thesusceptor 220. A robot (not shown) may then enter the processing chamber200 to engage and remove the substrate 301 therefrom though the loadingport. The susceptor 220 then may be actuated up to the processingposition to place the substrate 301, with a device side 224 facing up,on a front side 202 of the susceptor 220.

The susceptor 220 and the susceptor support 218, while located in theprocessing position, divide the internal volume of the processingchamber 200 into a process gas region 228 that is above the substrate301, and a purge gas region 230 below the susceptor 220 and thesusceptor support 218. The susceptor 220 and susceptor support 218 arerotated during processing by a supporting cylindrical central shaft 232,to minimize the effect of thermal and process gas flow spatial anomalieswithin the processing chamber 100 and thus facilitate uniform processingof the substrate 301. The central shaft 232 moves the substrate 301 inan up and down direction 234 during loading and unloading, and in someinstances, processing of the substrate 301.

In general, the central window portion of the upper dome 210 and thebottom of the lower dome 212 are formed from an optically transparentmaterial, such as quartz. One or more lamps, such as an array of thelamps 202, can be disposed adjacent to and beneath the lower dome 212 ina specified, optimal desired manner around the central shaft 232 toindependently control the temperature at various regions of thesubstrate 301. The heated substrate 301 is exposed to the process gases,thereby facilitating the thermal processing (i.e., deposition) of amaterial onto the upper surface of the substrate 301.

The lamps 202 may be configured to include bulbs 236 and be configuredto heat the substrate 301 to a temperature within a range of about 200degrees Celsius to about 1600 degrees Celsius, for example, about 300degrees Celsius to about 1200 degrees Celsius or about 500 to about 580degrees Celsius. Each lamp 202 is coupled to a power distribution board(not shown) through which power is supplied to each lamp 202. The lamps202 are positioned within a lamphead 238 which may be cooled during orafter processing by, for example, a cooling fluid introduced intochannels 252 located between the lamps 202. The lamphead 238conductively and radioactively cools the lower dome 212 due in part tothe close proximity of the lamphead 238 to the lower dome 212. Thelamphead 238 may also cool the lamp walls and walls of the reflectors(not shown) around the lamps. Alternatively, the lower dome 212 may becooled by a convective approach known in the industry. Depending uponthe application, the lampheads 238 may or may not be in contact with thelower dome 212. As a result of backside heating of the substrate 301,the use of an optical pyrometer 242 for temperature measurements/controlon the substrate 301 and the susceptor 220 may also be utilized.

A reflector 244 may be optionally placed outside the upper dome 210 toreflect infrared light that is radiating off the substrate 301 back ontothe substrate 301. The reflector 244 may be fabricated from a metal suchas aluminum or stainless steel. The efficiency of the reflection can beimproved by coating a reflector area with a highly reflective coatingsuch as with gold. The reflector 244 can have one or more machinedchannels 246 connected to a cooling source (not shown). The channel 246connects to a passage (not shown) formed on a side of the reflector 244.The passage is configured to carry a flow of a fluid such as water andmay run horizontally along the side of the reflector 244 in any desiredpattern covering a portion or entire surface of the reflector 244 forcooling the reflector 244.

Process gas supplied from a process gas supply source 248 is introducedinto the process gas region 228 through a process gas inlet 250 formedin the sidewall of the base ring 214. The process gas inlet 250 isconfigured to direct the process gas in a generally radially inwarddirection. During the film formation process, the susceptor 220 may belocated in the processing position, which is adjacent to and at aboutthe same elevation as the process gas inlet 250, allowing the processgas to flow up and round along a flow path across the upper surface ofthe substrate 301 in a laminar flow. The process gas exits the processgas region 228 through a gas outlet 255 located on the side of theprocessing chamber 200 opposite the process gas inlet 250. Removal ofthe process gas through the gas outlet 255 may be facilitated by avacuum pump 256 coupled thereto. As the process gas inlet 250 and thegas outlet 255 are aligned and disposed approximately at the sameelevation, it is believed that such a parallel arrangement, whencombined with a flatter upper dome 210 provides generally planar,uniform gas flow across the substrate 301. Further radial uniformity maybe provided by the rotation of the substrate 301 by the susceptor 220.

Purge gas may be supplied from a purge gas source 258 to the purge gasregion 230 through an optional purge gas inlet 260 (or through theprocess gas inlet 250) formed in the sidewall of the base ring 214. Thepurge gas inlet 260 is disposed at an elevation below the process gasinlet 250. The purge gas inlet 260 is configured to direct the purge gasin a generally radially inward direction. During the process, thesusceptor 220 may be located at a position such that the purge gas flowsdown and round along a flow path across the back side 204 of thesusceptor 220 in a laminar flow. Without being bound by any particulartheory, the flowing of the purge gas is believed to prevent orsubstantially avoid the flow of the process gas from entering into thepurge gas region 230, or to reduce diffusion of the process gas enteringthe purge gas region 230 (i.e., the region under the susceptor 220). Thepurge gas exits the purge gas region 230 and is exhausted out of theprocessing chamber 200 through the gas outlet 255, which is located onthe side of the processing chamber 200 opposite the purge gas inlet 260.

FIG. 3 is a schematic plan view diagram of an exemplary multi-chamberprocessing system 300 configured to perform a cleaning process and apost-cleaning baking process on substrates 301, according to one or moreembodiments of the disclosure. Multi-chamber processing system 300includes one or more load lock chambers 302, 304 for transferringsubstrates 301 into and out of the vacuum portion of multi-chamberprocessing system 300. Consequently, load lock chambers 302, 304 can bepumped down to introduce substrates into multi-chamber processing system300 for processing under vacuum. A first robot 310 transfers substrates301 between load lock chambers 302 and 304, transfer chambers 322 and324, and a first set of one or more processing chambers 200 and 100. Asecond robot 320 transfers substrates 301 between transfer chambers 322and 324 and processing chambers 332, 334, 336, 338.

One or both of the processing chambers 100 and 200 may be configured toperform a cleaning process and post-cleaning baking process, accordingto embodiments of the disclosure described herein. The transfer chambers322, 324 can be used to maintain ultra-high vacuum conditions whilesubstrates are transferred within multi-chamber processing system 300.Processing chambers 332, 334, 336, 338 are configured to perform varioussubstrate-processing operations including epitaxy deposition process,cyclical layer deposition (CLD), atomic layer deposition (ALD), chemicalvapor deposition (CVD), physical vapor deposition (PVD), and the like.In one embodiment, one or more of processing chambers 332, 334, 336, 338are configured to deposit a contact structure, a gate structure, or apre-gate surface, or other suitable structures, comprising a pluralityof material layers.

FIG. 4 is a flow diagram of a process 400 for removing native oxide froma substrate surface having a III-V compound (or germanium) containingmaterial. FIGS. 5A-5C are cross-sectional views of the substrate whenperforming the native oxide removal process at the differentmanufacturing stages depicted in FIG. 4.

The process 400 starts at operation 402 by transferring the substrate301, as shown in FIG. 5A, into a processing chamber, such as thecleaning processing chamber 100 depicted in FIG. 1, to perform a nativeoxide removal process. In one embodiment, the substrate 301 may be a 200mm, 300 mm or 450 mm silicon wafer, or other substrate used to fabricatemicroelectronic devices and the like. In one embodiment, the substrate301 may be a material such as III-V group compound containing substrateincluding gallium arsenide, indium phosphine and the like, crystallinesilicon (e.g., Si<100>, Si<111> or Si<001>), silicon oxide, strainedsilicon, silicon_((1-x))germanium_(x), doped or undoped polysilicon,doped or undoped silicon wafers and patterned or non-patterned waferssilicon on insulator (SOI), carbon doped silicon oxides, siliconnitride, doped silicon, germanium, gallium arsenide, glass, sapphire.The substrate 301 may have a circular wafer, as well as, rectangular orsquare panels. Unless otherwise noted, the examples described herein areconducted on substrates having a 300 mm diameter or a 450 mm diameter.In one embodiment, the substrate 301 has a material layer 502 disposedthereon. The material layer 502 may be a III-V compound containing layeror germanium (Ge) containing layer. In some examples wherein thematerial layer 502 is not present, the substrate 301 itself may be aIII-V compound containing layer or germanium (Ge) containing layer.Suitable examples of the germanium (Ge) containing layer include Ge orSiGe, and the like. Suitable examples of the III-V compound containinglayer include GaAs, InP, InAs, GaAs, GaP, InGaAs, InGaAsP, GaSb, InSb,the like, or combinations thereof.

Native oxide 506 is formed on a surface 504 of the material layer 502 onthe substrate 301, due to the exposure to either atmosphere or to one ormore fabrication processes that cause native oxide 506 to form, such asa wet or a moisture process.

As discussed above, as the substrate 301 may be exposed to air orambient atmosphere, native oxide 506 formed on the substrate surface 504may have oxygen, nitrogen, carbon, sulfur, or other elements commonlycontained in the air. Accordingly, the native oxide removal process asperformed herein is configured to remove the native oxide 506 includingnot only the oxide layer but also other derivative layers, includingcarbon, nitrogen, sulfur elements or the like, that may be found on thesubstrate surface 504.

At operation 404, a surface treatment process is performed to treat thenative oxide 506 formed on the substrate 301. The surface treatmentprocess is performed by supplying a surface treatment gas mixture intothe processing chamber 100 to treat the substrate surface 504 byaltering the bonding structures of the native oxide 506, thereby forminga treated native oxide 508, as shown in FIG. 5B. The treated nativeoxide 508 becomes fragile and more easily removed from the substratesurface 504 (compared to untreated native oxides) during the subsequentcleaning process.

The surface treatment process uses a plasma formed from the surfacetreatment gas mixture to plasma treat the native oxide 506 and thesurface 504 of the material layer 502. The plasma activates the nativeoxide 506 (or alter bonding structures of native oxide 506) or othersource of contaminants into an excited state, thereby forming treatednative oxide 508. The treated native oxide 508 may then easily reactwith cleaning gases subsequently supplied into the processing chamber100, forming volatile gaseous by-products that readily pump out of theprocessing chamber 100.

In one embodiment, the surface treatment gas mixture includes at leastone inert gas. It is believed that the inert gas supplied in the surfacetreatment gas mixture may assist extending the life of the ions in theplasma formed from the surface treatment gas mixture as well asproviding gentle bombardment of the substrate surface. Increased life ofthe ions may assist reacting with and activating the native oxide 506 onthe material layer 502 more thoroughly, thus enhancing the removal ofthe treated native oxide 508 from the material layer 502 during thesubsequent cleaning process. In addition, the inert gas supplied in thesurface treatment gas mixture may break native oxide of the III-V groupcompound (MO_(x), M belongs to III-V group elements, such as In, Ga, As,O), for example breaking atom-atom bonding in the native oxide 506,thereby forming weak and dangling bonds from In—O or P—O bonds, forexample, on the native oxide surface. Treated native oxide 508 with In—Oor P—O bond terminals may easily to be absorbed by other etchantssubsequently supplied to the processing chamber 100, thereby assistingthe ease of removal of the treated native oxide 508 from the substratesurface. The surface treatment process provides a more efficient surfaceactivating process and therefore increasing the efficiency of thetreating substrate surface during surface treatment process with minimumdamage to substrates.

Furthermore, during the surface treatment process, a RF source/biasapplied to generate plasma in the surface treatment gas mixture may bemaintained low so as to prevent damage or undesired surface bombardmentto the substrate surface.

Increased life time of the ions may assist with reacting and activatingthe native oxide 506 on the substrate 301 more thoroughly, therebyenhancing the removal of the treated native oxide 508 from the substrate301 during the surface treatment process.

In one embodiment, the inert gas supplied into the processing chamber100 includes at least one of He, Ar, Kr, Ne, and the like. The inert gassupplied into the processing chamber 100 includes at least one of Ar,He, such as Ar, and the like. In an exemplary embodiment, the inert gassupplied in the surface treatment gas mixture to perform the surfacetreatment process is Ar gas.

During the surface treatment process, several process parameters may beregulated to control the surface treatment process. In one exemplaryembodiment, a process pressure in the processing chamber 100 isregulated between about 5 mTorr to about 500 mTorr, such as betweenabout 10 mTorr and about 200 mTorr, for example, at about 20 mTorr. Arelatively low RF source power, such as less than 300 Watts, may beapplied to maintain a plasma in the surface treatment gas mixture. Forexample, a RF source power of about less than 300 Watts, such as about150 Watts to about 280 Watts, may be applied to maintain a plasma insidethe processing chamber 100. A relatively low RF bias power, such as lessthan 100 Watts, may be applied in the surface treatment gas mixture tomaintain plasma formed with a desired directionality. For example, a RFbias power of less than 100 Watts, such as less than 40 Watts, forexample between about 10 Watts and about 30 Watts, may be applied in thesurface treatment gas mixture. It is believed that the combination ofthe low RF source power and the low RF bias power may provide low energyatomic Ar or He atoms or other types of active species so as to alterbonding structures of the native oxide 506 on the material layer 502without overly damage/bombardment to the substrate surface. The lowpower surface treatment process provides a more efficient surfaceactivating process and therefore increasing the efficiency of thetreated substrate surface during pre-cleaning process with minimumdamage to substrates.

The inert gas supplied in the surface treatment gas mixture may beflowed into the chamber at a rate between about 200 sccm to about 5000sccm. A substrate temperature is maintained between about 25 degreesCelsius to about 200 degrees Celsius, for example at a temperature lessthan 150 degrees Celsius, such as between 30 degrees and about 90degrees Celsius.

In one embodiment, the substrate is subjected to perform the surfacetreatment process for a first period of time of between about 5 secondsto about 5 minutes, depending on the operating temperature, pressure andflow rate of the gas. For example, the substrate can be exposed forabout 10 seconds to about 120 seconds. In an exemplary embodiment, thesubstrate is exposed for about 40 seconds or less.

It is noted that the amount of each gas introduced into the processingchamber may be varied and adjusted to accommodate, for example, thethickness of the native oxide layer to be removed, the geometry of thesubstrate being cleaned, the volume capacity of the plasma, the volumecapacity of the chamber body, as well as the capabilities of the vacuumsystem coupled to the chamber body.

At operation 406, after supplying the surface treatment gas mixture inthe processing chamber 100 to alter the bonding structures of the nativeoxide 506 on the material layer 502, a native oxide removal process isthen performed to remove the treated native oxide 508 from the surfaces504 of the material layer 502, as shown in FIG. 5C. The native oxideremoval process is performed by supplying a cleaning gas mixture intothe processing chamber 100 to form a plasma from the cleaning gasmixture for removing the treated native oxide 508. As the treated nativeoxide 508 has been treated to have weak and dangling bonds with In—O orP—O bond terminals, for example, on the surface, during the oxideremoval process, the aggressive etchants from the cleaning gas mixturemay easily attack the weak and dangling bonds with In—O or P—O bondterminals and efficiently remove the treated native oxide 508 from thesubstrate surface.

In one embodiment, the cleaning gas mixture used to remove treatednative oxides 508 is a mixture of inert gas and hydrogen containing gas.Suitable examples of the hydrogen containing gas include H₂, NH₃, CH₄,C₂H₄ and the like. Suitable examples of the inert gas supplied in thecleaning gas mixture include He, Ar or the like. In one example, thehydrogen containing gas supplied in the cleaning gas mixture is H₂ andthe inert gas supplied in the cleaning gas mixture is Ar. The amount ofeach gas introduced into the processing chamber may be varied andadjusted to accommodate, for example, the thickness of the native oxidelayer to be removed, the geometry of the substrate being cleaned, thevolume capacity of the plasma, the volume capacity of the chamber body,as well as the capabilities of the vacuum system coupled to the chamberbody.

In one or more embodiments, the molar ratio by volume of the cleaninggas mixture is between about 1:10 and 10:1 (hydrogen containing gas toinert gas). It is believed that the hydrogen containing gas supplied inthe cleaning gas mixture may assist reacting with the excited oxygenspecies, forming volatile H₂O (e.g., water) vapor that readily pumps outof the processing chamber.

The operating pressure within the chamber can be varied. The pressure ismaintained between about 1 Torr and about 50 Torr. A relatively low RFsource power may be applied to maintain a plasma in the cleaning gasmixture. For example, a low RF source power of less than 800 Watts maybe applied to maintain a plasma inside the processing chamber 100. Thelow RF source power may be pulsed (supplied in pulse mode) or continued(supplied in continuous mode) as needed. A relatively low RF bias powerless than 40 Watts may also be optionally supplied in the gas mixture.The pulsing frequency at which the RF source power is applied around5000 Hz. The pulsing frequency can range from about 500 Hz to about10000 Hz. Similarly, as discussed above, the relatively low RF regimecontrolled during the process may assist providing gentle plasmareaction to remove the treated native oxide 508 from the substratesurface without overly damage the substrate surface. The substratetemperature is controlled at a temperature less than 150 degreesCelsius, such as between about 30 degrees Celsius and about 90 degreesCelsius.

In one embodiments, the substrate is subjected to perform the nativeoxide removal process for a second period of time of between about 5seconds to about 5 minutes, depending on the operating temperature,pressure and flow rate of the gas. For example, the substrate can beexposed for about 5 seconds to about 90 seconds. In an exemplaryembodiment, the substrate is exposed for about 60 seconds or less.

At operation 408, after the native oxide 506 is removed from thesubstrate, a post-cleaning baking process may be performed on thesurfaces 504 top remove residual oxygen, if any, from the substratesurface in the processing chamber 200 depicted in FIG. 2. Thepost-cleaning baking process performed at the processing chamber 200 maybe controlled at a relatively low thermal treatment process, such asless than 550 degrees Celsius, as compared to a conventional RTP thermalprocess or Epi deposition heating process. It is believed that overlyhigh temperature performed on a III-V group compound substrate mayresult in the atoms and/or elements in the III-V group compounddiffusion (e.g., P, or As element diffusion) and/or segregation (e.g.,In or Ga element segregation), altering surface stoichiometry of theIII-V group compound substrate. Thus, a relatively low temperaturepost-cleaning baking process, such as less than 550 degrees Celsius, maynot only assist providing a clean substrate surface, but also maintainintegrity of lattice structure from the III-V group compound withoutdamage the bonding substrate thereof.

The post-cleaning baking process at operation 408 is performed to removethe cleaning residuals, providing a clean surface, which may provide agood adherence for atoms from subsequent processes to nucleate andadhere thereon. Furthermore, the post-cleaning baking process asperformed at operation 408 may also help remove and blow off surfaceparticles, cleaning byproducts, or other surface impurities from thesubstrate surface, thereby providing a cleaning surface to have thesubsequent layer deposited thereon with minimum resistivity or interfacecontamination.

In one embodiment, the post-cleaning baking gas mixture may be suppliedduring the post-cleaning baking process. The post-cleaning baking gasmixture includes at least a hydrogen containing gas, a group III orgroup V containing gas. It is believed that hydrogen containing gassupplied in the post-cleaning baking gas mixture may react with theoxygen residuals formed on the substrate surface, thereby formingvolatile gas byproduct, such as H₂O containing ions or radicals, whichreadily pumps out of the chamber 200. Similarly, the group III or groupV containing gas may also react with the oxygen residuals formed on thesubstrate surface.

In one embodiment, the hydrogen containing gas be supplied into theprocessing chamber 200 includes at least one of H₂, H₂O, and the like.Group III or group V gas that may be used includes As or P containingprecursor, such as AsH₃, TbAs in the gas mixture for processing GaAs,InGaAs, PH₃ containing surfaces, or TbP in the gas mixture for InP, GaPcontaining surfaces and the like. The group V gas can be used topreserve the III-V group surface from decomposition during thepost-cleaning baking process.

In an exemplary embodiment, the hydrogen containing gas supplied in theprocessing chamber 200 to perform the post treatment process is H₂ gas.

During the post-cleaning baking process, several process parameters maybe regulated to control the post-cleaning baking process. In oneexemplary embodiment, a process pressure in the processing chamber 200is regulated between about 100 mTorr to about 5000 mTorr, such asbetween about 300 mTorr and about 3000 mTorr, for example, at about 2000mTorr. The hydrogen containing gas supplied in the post-cleaning bakingprocess may be flowed into the chamber 200 at a rate between about 200sccm to about 5000 sccm. A substrate temperature is maintained less than550 degrees Celsius, such as between about 300 degrees Celsius to about500 degrees Celsius.

In one embodiments, the substrate is subjected to perform thepost-cleaning baking process for a third period of time of between about5 seconds to about 5 minutes, depending on the operating temperature,pressure and flow rate of the gas. For example, the substrate can beexposed for about 30 seconds to about 90 seconds. In another embodiment,the substrate is exposed for about 90 seconds or less.

After the post-cleaning baking process, the surface 504 of the materiallayer 502 is then exposed and cleaned. In one example, the materiallayer 502 with the cleaned surface 504 may be a contact structure 602formed between an insulating material 604, as shown in FIG. 6A. Suitableinsulating material 604 may be a silicon oxide containing material, suchas BSG, BPSG, TEOS, silicon oxide or USG. A protrusion structure 606 maybe formed as part of the substrate 301 that has the material layer 502disposed thereon between the insulating material 604.

After the surface 504 of the material layer 502 is cleaned, anotherIII-V group compound material 608 may be formed on the cleaned materiallayer 502, as shown in FIG. 6B, in the processing chamber 200 by anepitaxy deposition process. It is noted that the post-cleaning bakingprocess performed at operation 408 and the epitaxy deposition process ofthe III-V group compound material 608 may be performed in a singleprocessing chamber, such as the processing chamber 200 depicted in FIG.2. By doing so, exposure of the substrate 301 to the ambient andadjacent atmosphere/environment may be eliminated, reducing thelikelihood of the native oxide re-growth on the substrate 301.Additionally, the substrate temperature maintained during the epitaxydeposition process may be the same as the substrate temperaturecontrolled during the post-cleaning baking process so that the processesare performed in the same processing chamber without temperaturefluctuation. Alternatively, the III-V group compound material 608 may beformed by any suitable deposition process, such as physical vapordeposition (PVD), chemical vapor deposition (CVD), atomic layerdeposition (ALD), and the like, as needed. In some example, thematerials formed on the cleaned material layer 502 may be any materialsother than III-V group compound as needed.

In summation, one or more examples of the present disclosure providemethods for removing native oxides and residues by performing amultiple-stage cleaning process including a surface treatment process, anative oxide removal process and a post-cleaning baking process asubstrate having a III-V compound containing material. Such process isadvantageously performed at a relatively low temperature, such as lessthan 550 degrees Celsius, to provide a clean surface for a subsequentmaterial, such as a III-V group compound material, on the cleaningsurface having another a III-V group compound material, withoutadversely damage the lattice structure of the III-V group compoundmaterial included in the substrate.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

We claim:
 1. A method for removing native oxides from a material layerdisposed on a substrate, comprising: supplying a first gas mixtureconsisting essentially of at least one first inert gas onto a surface ofthe material layer disposed on the substrate in a first processingchamber at a first temperature in a first temperature range for a firstperiod of time, wherein the material layer is a III-V group containinglayer, wherein supplying the first gas mixture breaks a bondingstructure of native oxide of the III-V group containing layer to form aIII-V containing oxide with a weak bonding structure on the surface ofthe material layer; supplying a second gas mixture including a secondinert gas and a hydrogen containing gas onto the surface of the materiallayer at a second temperature in the first temperature range for asecond period of time; and supplying a third gas mixture including ahydrogen containing gas to the surface of the material layer whilemaintaining the substrate at a third temperature less than 550 degreesCelsius in a second temperature range, wherein the third temperature isgreater than the first temperature and the second temperature, andwherein a lower bound of the second temperature range is greater thanthe upper bound of the first temperature range.
 2. The method of claim 1further comprising: maintaining the substrate at the first temperatureof less than 150 degrees Celsius while supplying at least one of thefirst gas mixture and the second gas mixture into the first processingchamber.
 3. The method of claim 1, wherein supplying the third gasmixture into the first processing chamber further comprises: maintainingthe substrate at the third temperature of between about 300 degreesCelsius and about 500 degrees Celsius.
 4. The method of claim 1, whereinthe material layer is a material selected from a group consisting ofGaAs, InP, InAs, GaAs, GaP, InGaAs, InGaAsP, GaSn and InSb.
 5. Themethod of claim 1, the hydrogen containing gas used in the second andthe third gas mixtures include at least one of H₂, CH₄ and C₂H₄.
 6. Themethod of claim 1, wherein the first inert gas and the second inert gasused in the first and the second mixtures, respectively, includes atleast one of Ar and He.
 7. The method of claim 1, wherein supplying thefirst gas mixture into the first processing chamber further comprises:applying a RF source power less than 300 Watts in the first gas mixture.8. The method of claim 1, wherein supplying the second gas mixture intothe first processing chamber further comprises: pulsing a RF sourcepower less than 300 Watts in the second gas mixture.
 9. The method ofclaim 1, wherein supplying the third gas mixture further comprises:supplying the third gas mixture to the material layer disposed on thesubstrate in a second processing chamber different from the firstprocessing chamber.
 10. The method of claim 1, wherein supplying thesecond gas mixture further comprises: removing the III-V containingoxide from the surface of the material layer.
 11. The method of claim 1,wherein supplying the third gas mixture further comprises: performing apost-cleaning baking process to remove residual oxide from the substrateof the material layer.
 12. A method for removing native oxides from amaterial layer disposed on a substrate, comprising: performing a surfacetreatment process to alter bonding structures of native oxide on thematerial layer disposed on the substrate at a first temperature in afirst temperature range, wherein the material layer is a III-V groupcontaining layer, wherein the surface treatment process includessupplying a first gas mixture consisting essentially of at least oneinert gas onto a surface of the material layer, wherein supplying thefirst gas mixture breaks the bonding structures of native oxide of theIII-V group containing layer to form a III-V containing oxide with aweak bonding structure on the surface of the material layer, wherein thesurface treatment process is performed in a first processing chamber;performing a native oxide removal process to remove the III-V containingoxide from the material layer at a second temperature in the firsttemperature range, wherein the native oxide removal process is performedin the first processing chamber; and performing a post-cleaning bakingprocess on the material layer at a third temperature less than 550degrees Celsius in a second temperature range, wherein the thirdtemperature is greater than the first temperature and the secondtemperature, and wherein a lower bound of the second temperature rangeis greater than the upper bound of the first temperature range, and thepost-cleaning baking process is performed in a second processing chamberdifferent than the first processing chamber.
 13. The method of claim 12,wherein the surface treatment process further comprises: applying a RFsource power less than 300 Watts in the first gas mixture.
 14. Themethod of claim 12, wherein the native oxide removal process furthercomprises: supplying a second gas mixture including a hydrogencontaining gas and an inert gas to the surface of the material layer;and pulsing a RF source power in the second gas mixture.
 15. The methodof claim 12, further comprising: maintaining the first temperature atless than 150 degrees Celsius while performing the surface treatmentprocess and the native oxide removal process.
 16. The method of claim12, further comprising: performing a III-V group material depositionprocess to form a III-V group compound material on the material layer inthe second processing chamber.
 17. A method for removing native oxidesfrom a material layer disposed on a substrate, comprising: supplying afirst gas mixture consisting essentially of at least one first inert gasonto a surface of the material layer disposed on the substrate into afirst processing chamber at a first temperature in a first temperaturerange for a first period of time, wherein supplying the first gasmixture breaks a bonding structure of native oxide of the material layerto form a material layer oxide with a weak bonding structure on thesurface of the material layer, wherein the material layer is a materialselected from a group consisting of Ge and SiGe; supplying a second gasmixture including a second inert gas and a hydrogen containing gas ontothe surface of the material layer at a second temperature in the firsttemperature range for a second period of time; and supplying a third gasmixture including a hydrogen containing gas to the surface of thematerial layer while maintaining the substrate at a third temperatureless than 550 degrees Celsius in a second temperature range, wherein thethird temperature is greater than the first temperature and the secondtemperature, and wherein a lower bound of the second temperature rangeis greater than the upper bound of the first temperature range.
 18. Themethod of claim 17, further comprising: performing the supplying a firstgas mixture and the supplying a second gas mixture in the firstprocessing chamber; and performing the supplying a third gas mixture ina second processing chamber.
 19. The method of claim 17, wherein thesupplying a second gas mixture comprises pulsing a RF source power inthe second gas mixture.
 20. The method of claim 17, wherein thesupplying a first gas mixture comprises applying a RF source power lessthan 300 Watts in the first gas mixture.